Metal top stacking package structure and method for manufacturing the same

ABSTRACT

A meal top stacking package structure and a method for manufacturing the same are provided, wherein the metal top stacking package structure includes a metal base including an upper surface and a lower surface, and a die receiver cavity formed in the upper surface; a first chip fixed on the die receiver cavity by a first adhesion layer; a substrate with an upper surface; a second chip fixed on the upper surface of the substrate by a second adhesion layer; and a plurality of connecting components formed on the upper surface of the substrate; wherein the upper surface of the metal base is connected with the substrate by the connecting components. Thereby, the structure and method can enhance heat dissipation and electromagnetic shield of the stacking package structure.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor chip package structureand a method for manufacturing the same, and more particularly to ametal top stacking package structure and a method for manufacturing thesame.

2. Description of Related Art

A multichip package (MCP) structure is a package with a plurality ofsemiconductor chips integrated into a single package structure, so thatdensity of electronic components is enhanced to shorten the electricalconnecting channels between electronic components. This package not onlyreduces the overall size of the multichip but also enhances overallperformance.

In conventional multichip package structure, a plurality of chips arestacked vertically, alternately, stepwise or otherwise, and then each ofthe chips is electrically connected to a substrate through wire bonding.In multi-semiconductor chips stacking package technology, a stackingpackage technology of multichip with same size is a conventional packagetechnology.

In the known technology, please refer to FIG. 1, a thermally andelectrically enhanced stacked semiconductor package 1 is provided. Thesemiconductor package 1 mainly comprises a chip carrier 11 used forelectrically connecting the semiconductor package 1 to the externalcomponents; at least one second chip 12 is mounted on and electricallyconnected to the chip carrier 11 by a flip chip type; a heat sink 13mounded over the first chip 12 and electrical connecting with the chipcarrier 11; a conductive layer 14 and at least one second chip 15electrical connecting with the working surface of the chip carrier 11 byelectrically connecting wires and mounded on the non-working surface; aplurality of wires 16 and an encapsulate material 17 are formed on thechip carrier 11 and encapsulating the first chip 12, the second chip 15,the heat sink 13 and the other components, and partly the chip carrier11.

However, as shown in FIG. 1, the heat sink between the first chip andthe second chip cannot achieve the ideal effect in heat dissipation andelectromagnetic shielding; therefore, the heat energy during the workingchips cannot effectively dissipate from the package, thereby reducingthe chip stability and life time. Therefore, there is an urgent need fora metal top stacking package structure and a method for manufacturingthe same, which provides heat dissipation and electromagnetic shieldingby an optimum installation of the metal top; thereby enhancingelectrical connection quality and life time of the chips.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a metal top stackingpackage structure, which the heat dissipation and the electromagneticshielding can be provided by using an installation of the metal top.Therefore, it can be prevented working chips from malfunctioning anddamaging.

To achieve the above object, the present invention provides a metal topstacking package structure, comprising a metal base including an uppersurface and a lower surface, and a die receiver cavity formed in theupper surface; a first chip fixed on the die receiver cavity by a firstadhesion layer; a substrate with an upper surface; a second chip fixedon the upper surface of the substrate by a second adhesion layer; and aplurality of connecting components formed on the upper surface of thesubstrate; wherein the upper surface of the metal base is connected withthe substrate by the connecting components.

In the metal top stacking package structure of the present invention,the structure may further comprise a plurality of electricallyconnecting wires including first electrically connecting wires andsecond electrically connecting wires. An installation of theseelectrically connecting wires may be randomly varied based on stackingpackage conditions or the user's requirements; wherein a plurality ofthe first electrically connecting wires can be coupled the first chipwith the metal base. Further, a plurality of the second electricallyconnecting wires may be coupled the second chip with the substrate.Besides, in the metal top stacking package structure of the presentinvention, an order of wire bonding may be randomly varied based onstacking package conditions or the user's requirements; wherein the wirebonding between the first chip and the metal base may be firstlyperformed, and then a wire bonding between the second chip and thesubstrate may be performed; alternatively, a wire bonding between thesecond chip and the substrate may be firstly performed, and then thewire bonding between the first chip and the metal base may be performed.

In the metal top stacking package structure of the present invention,the metal top stacking package structure may further comprise a heatsink formed on the lower surface of the metal base; wherein the heatsink may be a heat spreader, a heat pipe or a fan, but the presentinvention is not limited thereto. In an aspect of the present invention,the heat sink may be a heat spreader, and the material of the heatspreader is a copper material. The heat energy during the working chipsmay be dissipated to the other semiconductor chips or the metal base bythe heat sink.

In the metal top stacking package structure of the present invention,the upper surface of the substrate may further comprise a metal layer;wherein the material of the metal layer may be randomly varied based onstacking package conditions or the user's requirements, and the materialof the metal layer may be a magnesium alloy, an aluminum alloy, a copperalloy, a ferrous alloy, magnesium copper alloy or combinations thereof,but the present invention is not limited thereto. In an aspect of thepresent invention, the material of the metal layer may be magnesiumalloy, and in another aspect of the present invention, the material ofthe metal layer may be copper alloy.

In the metal top stacking package structure of the present invention,the metal top stacking package structure may further comprise a firstencapsulate material formed on the substrate and surrounding the metalbase, the first chip, the second chip, the first adhesion layer, thesecond adhesion layer, the first electrically connecting wires, thesecond electrically connecting wires and the connecting components;wherein the lower surface of the metal base may be exposed.

In the metal top stacking package structure of the present invention,the metal top stacking package structure may further comprise a secondencapsulate material formed in the receiver cavity of the metal base andsurrounding the first chip, the first adhesion layer and the firstelectrically connecting wires. In the metal top stacking packagestructure of the present invention, the first encapsulate material andthe second encapsulate material may be the same; the first encapsulatematerial and the second encapsulate material may be components selectedfrom the group consisting of epoxy resin, ceramic powders, carbon black,but the present invention is not limited thereto.

Besides, another object of the present invention is to provide a methodfor manufacturing metal top stacking package structure, comprising:providing a metal base including a upper surface and a lower surface,and a die receiver cavity formed in the upper surface; forming a firstadhesion layer on the die receiver cavity of the upper surface; fixing afirst chip to the die receiver cavity of the upper surface by the firstadhesion layer; providing a substrate with an upper surface; fixing asecond chip to the upper surface of the substrate by the second adhesionlayer; and a plurality of connecting components formed on the uppersurface of the substrate; wherein the upper surface of the metal basemay be connected with the substrate by the connecting components.

In the method for manufacturing metal top stacking package structure,the method may further comprise a plurality of first electricallyconnecting wires coupled the first chip with the metal base to input andoutput signals. Further, the method may further a plurality of secondelectrically connecting wires coupled the second chip with the substrateto input and output signals. Besides, in the method for manufacturingmetal top stacking package structure, an order of wire bonding may berandomly varied based on stacking package conditions or the user'srequirements; wherein the wire bonding between the first chip and themetal base can be firstly performed, and then a wire bonding between thesecond chip and the substrate can be performed; alternatively, a wirebonding between the second chip and the substrate can be firstlyperformed, and then the wire bonding between the first chip and themetal base can be performed.

In the method for manufacturing metal top stacking package structure,the method may further comprise a heat sink formed on the lower surfaceof the metal base; wherein the heat sink may be a heat spreader, a heatpipe or a fan, but the present invention is not limited thereto. In anaspect of the present invention, the heat sink may be a heat spreader.

In the method for manufacturing metal top stacking package structure,the method may further comprise a metal layer may be formed on the uppersurface of the substrate; wherein the material of the metal layer may berandomly varied based on stacking package conditions or the user'srequirements, and the material of the metal layer may be a magnesiumalloy, an aluminum alloy, a copper alloy, a ferrous alloy, magnesiumcopper alloy or combinations thereof, but the present invention is notlimited thereto. In an aspect of the present invention, the material ofthe metal layer may be magnesium alloy, and in another aspect of thepresent invention, the material of the metal layer may be copper alloy.

In the method for manufacturing metal top stacking package structure,the method may further comprise a first encapsulate material formed onthe substrate and surrounding the metal base, the first chip, the secondchip, the first adhesion layer, the second adhesion layer, the firstelectrically connecting wires, the second electrically connecting wires,and the connecting components; wherein the lower surface of the metalbase may be exposed.

In the method for manufacturing metal top stacking package structure,the method may further comprise a second encapsulate material formed inthe die receiver cavity of the metal base and surrounding the firstchip, the first adhesion layer and the first electrically connectingwires. In the metal top stacking package structure of the presentinvention, the first encapsulate material and the second encapsulatematerial may be the same; and the first encapsulate material and thesecond encapsulate material may be components selected from the groupconsisting of epoxy resin, ceramic powders, carbon black, but thepresent invention is not limited thereto.

Therefore, the effects of the present invention are enhancement of heatdissipation and electromagnetic shielding of the stacking packagestructure, thereby enhancing the stability and life time of the chips.To sum up, the technical features of the present invention is the metalbase mounted over the first chip and the second chip to provide optimumeffects in heat dissipation and electromagnetic shielding, therebyenhancing the stability of the package structure. Furthermore, a heatsink of the present invention can be directly formed on the lowersurface of the metal base to enhance the heat dissipation of the packagestructure. Besides, the metal layer of the present invention can beformed on the substrate to provide a preferable electromagneticshielding to avoid interference of magnetic field and enhance thestability of the package structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and other advantages of thepresent invention will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 shows a sectional schematic diagram of a conventional multichipstacking package structure.

FIG. 2 shows a sectional schematic diagram of a metal top stackingpackage structure according to Example 1 of the present invention.

FIG. 3A˜3H show a process flow schematic diagram of a metal top stackingpackage structure according to Example 1 of the present invention.

FIG. 4 shows a flow diagram of a method for manufacturing the metal topstacking package structure according to Example 5 of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereinafter, the actions and the effects of the present invention willbe explained in more detail via specific examples of the invention.However, these examples are merely illustrative of the present inventionand the scope of the invention should not be construed to be definedthereby.

Example 1

Please refer to FIG. 3, FIG. 3 shows a process flow schematic diagram ofa metal top stacking package structure according to Example 1 of thepresent invention; and please refer to FIG. 2, FIG. 2 shows a sectionalschematic diagram of a metal top stacking package structure according toExample 1 of the present invention. Please refer to FIG. 3A, first, ametal base 20 including an upper surface 201 and a lower surface 203 isprovided, and a plurality of die receiver cavities 202 are formed in theupper surface 201. Secondly, please refer to FIG. 3B, a plurality offirst chips 22 are fixed on these die receiver cavities 202 by aplurality of the first adhesion layers 21. Please refer to FIG. 3C,these first chips 22 are electrically connected with the metal base 20by a plurality of first electrically connecting wires 23 to input andoutput signals. Further, a second encapsulate material 24′ is formed inthese die receiver cavities 202 of the metal base 20 and surrounds thesefirst adhesion layers 21, these first chips 22 and these firstelectrically connecting wires 23. Moreover, these die receiver cavities202 are cut, as shown in FIG. 3D. Further, please refer to FIG. 3E, asubstrate with an upper surface 251 is provided, and a plurality ofsecond chips 26 are fixed on the upper surface 251 of the substrate 25by a plurality of the second adhesion layers 21′. Besides, please referto FIG. 3F, these second chips 26 are electrically connected to thesubstrate 25 by a plurality of the second electrically connecting wires23′ to input and output signals; and a plurality of connectingcomponents 27 are formed on the upper surface 251 of the substrate 25.Then please refer to FIG. 3G, the upper surface 201 of the metal bases20 is connected with the substrate 25 by these connecting components 27.Finally, please refer to FIG. 3H, a first encapsulate material 24 isformed on the substrate 25 and surrounds the metal base 20, these firstadhesion layers 21, these second adhesion layers 21′, these first chips22, these second chips 26, these first electrically connecting wires 23,these second electrically connecting wires 23′ and these connectingcomponents 27, and the lower surface of the metal base is exposed.

Example 2

The metal top stacking package structure of Example 2 of the presentinvention is substantially the same as the above Example 1, except thatthe second encapsulate material 24′ is formed in the receiver cavity ofthe metal base and surrounds these first adhesion layers, these firstchips and these first electrically connecting wires, and the firstencapsulate material is formed on the substrate and surrounds the metalbase, the first chip, the second chip, the first adhesion layer, thesecond adhesion layer, the first electrically connecting wires, thesecond electrically connecting wires, and the connecting components;wherein the lower surface of the metal base is exposed in Example 1 ofthe present invention. However, in Example 2 of the present invention,the first encapsulate material is formed on the substrate and surroundsthe metal base, these first adhesion layers, these second adhesionlayers, these first chips, these second chips, these first electricallyconnecting wires, these second electrically connecting wires and theseconnecting components after the metal base is electrically connectedwith the substrate; wherein the lower surface of the metal base isexposed. Namely, Example 1 of the present invention includes the firstencapsulate material 24 and the second encapsulate material 24′, butExample 2 of the present invention only includes the first encapsulatematerial 24 to simplify processes and reduce manufacturing cost.

Example 3

The metal top stacking package structure of Example 3 of the presentinvention is substantially the same as the above Example 1, except thatthe lower surface of the metal base of Example 1 is without anycomponent, but the lower surfaces of the metal bases of Example 3 have aheat sink. The heat sink is directly formed on the lower surface of themetal base in Example 3 to enhance heat dissipation of the packagestructure. Further, the heat sink in Example 3 is a heat spreader, andthe material of the heat spreader is a copper material. The heat energyduring the working chips is dissipated to the other semiconductor chipsor the metal base by the heat sink

Example 4

The metal top stacking package structure of Example 4 of the presentinvention is substantially the same as the above Example 1, except thatthe second adhesion layers are formed on the substrate in Example 1, butthe metal layers are formed on the substrate and then the secondadhesion layers are formed in Example 4. Further, the materials of themetal layers may be randomly varied based on stacking package conditionsand the user's requirements, and the materials of the metal layer can bea magnesium alloy, an aluminum alloy, a copper alloy, a ferrous alloy,magnesium copper alloy or combinations thereof. Therefore, the packagestructure has a preferable electromagnetic shielding because of themetal layer, and avoids interference of magnetic field to enhance thestability of the package structure.

Example 5

Please refer to FIG. 4, FIG. 4 shows a flow diagram of a method formanufacturing the metal top stacking package structure according toExample 5 of the present invention. First, as shown in step 401, a metalbase including an upper surface and a lower surface is provided, and aplurality of die receiver cavities are formed in the upper surface.Second, as shown in step 402, a plurality of first chips are fixed onthese die receiver cavities by a plurality of first adhesion layers.Further, as shown in step 403, a plurality of the first electricallyconnecting wires are coupled these first chips with these metal base;and as shown in step 404, a second encapsulate material formed in thesereceiver cavities of the metal base and surrounds these first chips,these first adhesion layers, and the first electrically connectingwires. Besides, as shown in step 405, a substrate with an upper surfaceis provided; as shown in step 406, a plurality of second chips are fixedon the upper surface of the substrate by a plurality of second adhesionlayers. Furthermore, as shown in step 407, a plurality of secondelectrically connecting wires are coupled these second chips with thesubstrate; as shown in step 408, a plurality of connecting componentsare formed on the upper surface of the substrate, and the upper surfaceof the metal base connects with the substrate by the connectingcomponents. Finally, as shown in step 409, a first encapsulate materialis formed on the substrate and surrounds the metal base, these firstadhesion layers, these second adhesion layers, these first chips, thesesecond chips, these first electrically connecting wires, these secondelectrically connecting wires, the substrate, and the connectingcomponents, and the lower surface of the metal base is exposed.

In the metal top stacking package structure and the method formanufacturing the same, the metal base is formed over the first chip andthe second chip to provide preferable electromagnetic shielding and theheat dissipation, thereby enhancing stability of the package structure.The heat sink of the present invention can be directly formed on thelower surface of metal base to enhance heat dissipation of the packagestructure. Besides, the metal layer can be formed on the substrateaccording to actual product properties to provide preferableelectromagnetic shielding and avoid interference of external magneticfield.

It should be understood that these examples are merely illustrative ofthe present invention and the scope of the invention should not beconstrued to be defined thereby, and the scope of the present inventionwill be limited only by the appended claims.

What is claimed is:
 1. A metal top stacking package structure,comprising: a metal base including an upper surface and a lower surface,and a die receiver cavity formed in the upper surface; a first chipfixed on the die receiver cavity by a first adhesion layer; a substratewith an upper surface; a second chip fixed on the upper surface of thesubstrate by a second adhesion layer, wherein the second chip is locatedoutside the die receiver cavity; and a plurality of connectingcomponents formed on the upper surface of the substrate; wherein theupper surface of the metal base is connected with the substrate by theconnecting components, and wherein a first encapsulate material isformed on the substrate to surround the second chip, and a secondencapsulate material is formed in the die receiver cavity of the metalbase to surround the first chip and not protruding from the die receivercavity, wherein the metal top stacking package structure furthercomprises a plurality of first electrically connecting wires which areaccommodated inside the die receiver cavity and coupling the first chipwith the metal base, and wherein the second chip is directly below thefirst chip.
 2. The metal top stacking package structure of claim 1,further comprises a plurality of second electrically connecting wirescoupling the second chip with the substrate.
 3. The metal top stackingpackage structure of claim 1, further comprises a heat sink formed onthe lower surface of the metal base.
 4. The metal top stacking packagestructure of claim 1, wherein the upper surface of the substrate furthercomprises a metal layer.
 5. The metal top stacking package structure ofclaim 2, wherein the first encapsulate material is further surroundingthe metal base, the second adhesion layer, the second electricallyconnecting wires, and the connecting components; and the lower surfaceof the metal base is exposed.
 6. The metal top stacking packagestructure of claim 1, wherein the second encapsulate material is furthersurrounding the first adhesion layer and the first electricallyconnecting wires.
 7. The metal top stacking package structure of claim6, wherein the first encapsulate material and the second encapsulatematerial are the same.
 8. A method for manufacturing metal top stackingpackage structure, comprising: providing a metal base including an uppersurface and a lower surface, and a die receiver cavity formed in theupper surface; forming a first adhesion layer on the die receiver cavityof the upper surface; fixing a first chip to the die receiver cavity ofthe upper surface by the first adhesion layer; providing a substratewith an upper surface; fixing a second chip to the upper surface of thesubstrate by a second adhesion layer, wherein the second chip is locatedoutside the die receiver cavity; and a plurality of connectingcomponents formed on the upper surface of the substrate; wherein theupper surface of the metal base is connected with the substrate by theconnecting components, and a first encapsulate material is formed on thesubstrate to surround the second chip after the upper surface of themetal base is connected with the substrate, and a second encapsulatematerial is formed in the die receiver cavity of the metal base tosurround the first chip before the upper surface of the metal base isconnected with the substrate, wherein the second encapsulate material isnot protruding from the die receiver cavity, and a plurality of firstelectrically connecting wires are accommodated inside the die receivercavity and coupling the first chip with the metal base.
 9. The methodfor manufacturing metal top stacking package structure of claim 8,further comprises a plurality of second electrically connecting wirescoupling the second chip with the substrate.
 10. The method formanufacturing metal top stacking package structure of claim 8, furthercomprises a heat sink formed on the lower surface of the metal base. 11.The method for manufacturing metal top stacking package structure ofclaim 8, further comprises a metal layer formed on the upper surface ofthe substrate.
 12. The method for manufacturing metal top stackingpackage structure of claim 9, wherein the first encapsulate material isfurther surrounding the metal base, the second adhesion layer, thesecond electrically connecting wires, and the connecting components; andthe lower surface of the metal base is exposed.
 13. The method formanufacturing metal top stacking package structure of claim 8, whereinthe second encapsulate material is further surrounding the firstadhesion layer and the first electrically connecting wires.